Large-signal-modulation of high-efficiency light-emitting diodes for optical communication
- 1 December 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 36 (12) , 1445-1453
- https://doi.org/10.1109/3.892565
Abstract
The dynamic behavior of high-efficiency light-emitting diodes (LEDs) is investigated theoretically and experimentally. A detailed theoretical description of the switch-on and switch-off transients of LEDs is derived. In the limit of small-signal modulation, the well-established exponential behavior is obtained. However, in the case of high injection, which is easily reached for thin active layer LEDs, the small-signal time constant is found to be up to a factor of two faster than the radiative recombination lifetime. Using such quantum-well LEDs, we have demonstrated optical data transfer with wide open eye diagrams at bit rates up to 2 Gbit/s. In addition, we have combined the use of thin active layers with the concept of surface-textured thin-film LEDs, which allow a significant improvement in the light extraction efficiency. With LEDs operating at 0.5 Gbit/s and 1 Gbit/s, we have achieved external quantum efficiencies of 36% and 29%, respectively.Keywords
This publication has 15 references indexed in Scilit:
- GHz bandwidth GaAs light-emitting diodesApplied Physics Letters, 1999
- Realization of highly efficient and high-speed resonant cavity LED for coupling to plastic optical fibersPublished by SPIE-Intl Soc Optical Eng ,1999
- Light-emitting diodes with 31% external quantum efficiency by outcoupling of lateral waveguide modesApplied Physics Letters, 1999
- Tunnel contact junction native-oxide aperture and mirror vertical-cavity surface-emitting lasers and resonant-cavity light-emitting diodesApplied Physics Letters, 1999
- Realization and characterization of 8×8 resonant cavity LED arrays mounted onto CMOS drivers for POF-based interchip interconnectionsIEEE Journal of Selected Topics in Quantum Electronics, 1999
- Light-emitting diodes with 17% external quantum efficiency at 622 Mb/s for high-bandwidth parallel short-distance optical interconnectsIEEE Journal of Selected Topics in Quantum Electronics, 1999
- 30% external quantum efficiency from surface textured, thin-film light-emitting diodesApplied Physics Letters, 1993
- Photoexcited carrier lifetimes and spatial transport in surface-free GaAs homostructuresJournal of Vacuum Science & Technology B, 1990
- Design parameters of frequency response of GaAs—(Ga,Al)As double heterostructure LED's for optical communicationsIEEE Transactions on Electron Devices, 1977
- Calculated spectral dependence of gain in excited GaAsJournal of Applied Physics, 1976