InP/InGaAs buried-structure avalanche photodiodes
- 16 February 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (4) , 158-159
- https://doi.org/10.1049/el:19840106
Abstract
Planar InP/InGaAs avalanche photodiodes with a new guardring structure have been designed and fabricated. The diodes had a buried n-InP layer and an n−-InP multiplication region under p-n junctions. A successful guardring effect was obtained. The diode exhibited a uniform multiplication over the active region, a maximum multiplication factor of 30, low dark currents of around 20 nA at 90% of breakdown voltage and a flat frequency response up to 1 GHz. Multiplication noise was measured up to a multiplication factor of 17.Keywords
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