On the determination of the minority carrier lifetime from the reverse recovery transient of pnR diodes
- 31 January 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (1) , 87-91
- https://doi.org/10.1016/0038-1101(75)90074-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Simple expression for storage time of arbitrary base diodeSolid-State Electronics, 1966
- Simple analytical approximations to the switching times in narrow base diodesSolid-State Electronics, 1964
- Minority Carrier Lifetime in p-n Junction DevicesJournal of Applied Physics, 1957
- Transient Response of a p-n JunctionJournal of Applied Physics, 1954
- Switching Time in Junction Diodes and Junction TransistorsProceedings of the IRE, 1954