Effect of d.c. bias level on the spectrum of GaAs lasers operated with short pulses
- 8 January 1976
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 12 (1) , 25-26
- https://doi.org/10.1049/el:19760018
Abstract
Experimental results on stripe-geometry GaAs/GaxAl1−xAs lasers show that the emission spectrum when operated with short pulses is very dependent on the d.c. bias level. If the bias is below threshold, many modes are excited and the spectral bandwidth is about 30 Å, but a bias just above threshold ensures virtually single-mode operation with about 1 Å bandwidth.Keywords
This publication has 1 reference indexed in Scilit:
- NOVEL OPTICAL METHODS FOR HIGH SPEED DIRECT MODULATION OF SEMICONDUCTOR LASERSPublished by Japan Society of Applied Physics ,1975