Temperature dependence of Hall mobility and electrical conductivity in SIMOX films

7 June 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (12) , 485-486
https://doi.org/10.1049/el:19840337

Abstract

Transport data obtained on SIMOX films between 77 and 300 K are qualitatively different from those derived for bulk silicon. Results suggest a strong nonuniformity of carrier mobility: the uppermost part of the SIMOX layer is of comparable quality to bulk Si, but near the buried oxide there is a degradation, confirmed by prevailing coulombian scattering even at 300 K.

Keywords

COULOMBIAN SCATTERING
SOI TECHNOLOGY
CARRIER MOBILITY
77K TO 300K
NONUNIFORMITY
SIMOX FILMS
HALL MOBILITY
ELECTRICAL CONDUCTIVITY