Surface Electric-Field—Induced Raman Scattering in PbTe and SnTe
- 20 September 1971
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 27 (12) , 808-811
- https://doi.org/10.1103/physrevlett.27.808
Abstract
Electric-field-induced scattering by normally Raman-inactive LO phonons is observed in the IV-VI-compound (NaCl structure) semiconductors PbTe and SnTe with Pb films on -type samples to induce energy-band bending. The observed Raman peaks correspond to unscreened LO phonons. A discussion of the mechanisms contributing to the surface field-induced Raman scattering in these materials is presented.
Keywords
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