A 100-V lateral DMOS transistor with a 0.3-micrometer channel in a 1-micrometer silicon-film-on-insulator-on-silicon
- 1 July 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (7) , 1655-1659
- https://doi.org/10.1109/16.85163
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- A high voltage offset-gate SOS/MOS transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979