The Dynamics of High-Field Propagating Domains in Bulk Semiconductors
- 1 December 1967
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 46 (10) , 2235-2259
- https://doi.org/10.1002/j.1538-7305.1967.tb02456.x
Abstract
This paper discusses the dynamics of high-field propagating domains in bulk semiconductors such as gallium arsenide. First, the origin of a high-field domain and its nucleation mechanism are discussed. Next, important properties of a steady-state hig...Keywords
This publication has 2 references indexed in Scilit:
- Theory of negative-conductance amplification and of Gunn instabilities in "two-valley" semiconductorsIEEE Transactions on Electron Devices, 1966
- Specific Negative Resistance in SolidsProceedings of the Physical Society, 1963