Diamond deposition on silicon surfaces heated to temperature as low as 135 °C
- 16 September 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (12) , 1473-1475
- https://doi.org/10.1063/1.106382
Abstract
Diamond films were deposited on the silicon wafer at as low a temperature as 135 °C by filament-assisted chemical vapor deposition. Silicon wafer substrate scratched with diamond powder was cooled by a stream of water flowing around a substrate holder. The films were identified as diamond by Raman spectroscopy. Clearly faceted crystals were shown in scanning electron micrographs.Keywords
This publication has 4 references indexed in Scilit:
- Low-temperature deposition of diamond films for optical coatingsApplied Physics Letters, 1989
- Low-temperature diamond deposition by microwave plasma-enhanced chemical vapor depositionApplied Physics Letters, 1989
- Diamond synthesis from gas phase in microwave plasmaJournal of Crystal Growth, 1983
- Vapor Deposition of Diamond Particles from MethaneJapanese Journal of Applied Physics, 1982