Orientation control of YBa2Cu3O7 thin films on MgO for epitaxial junctions
- 23 March 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (12) , 1516-1518
- https://doi.org/10.1063/1.107262
Abstract
A low-temperature argon ion milling process has been used to induce growth of c-oriented YBa2Cu3O7 on (001) MgO substrates with the in-plane film axes rotated 45° with respect to those of the substrate, and with respect to those of films grown on untreated regions of the substrate. This process is compatible with standard photolithographic processing, and has been used to produce defined areas of the two orientations on the same substrate. Josephson junctions and dc SQUIDs have been fabricated using the resulting grain boundaries.Keywords
This publication has 12 references indexed in Scilit:
- Extension of the bi-epitaxial Josephson junction process to various substratesApplied Physics Letters, 1991
- Strongly coupled high Tc edge junctionsPhysica C: Superconductivity and its Applications, 1991
- Bi-epitaxial grain boundary junctions in YBa2Cu3O7Applied Physics Letters, 1991
- Microstructure of epitaxial YBa2Cu3O7 films on step-edge SrTiO3 substratesPhysica C: Superconductivity and its Applications, 1991
- Substrate step-edge YBa2Cu3O7 rf SQUIDsApplied Physics Letters, 1991
- Resistive loss at 10 GHz in c-axis-aligned in-situ-grown filmsPhysical Review B, 1991
- Growth of YBa2Cu3O7 thin films on MgO: The effect of substrate preparationApplied Physics Letters, 1990
- Y1Ba2Cu3O7−x thin films grown on sapphire with epitaxial MgO buffer layersApplied Physics Letters, 1990
- Superconducting transport properties of grain boundaries in bicrystalsPhysical Review B, 1990
- Superconducting and Structural Properties of EuBa2Cu3O7-δ Ultrathin Films Deposited on MgO(100) Substrates Using Magnetron SputteringJapanese Journal of Applied Physics, 1990