Heteroepitaxial growth of alkali halides on a GaAs(001) substrate

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Abstract
Heteroepitaxial growth of alkali halides on GaAs(001) substrates was studied by use of reflection high-energy electron diffraction and electron energy loss spectroscopy (EELS). In the case of NaCl growth on a GaAs(001) substrate (misfit 0.40%), epitaxial growth occurred when the substrate temperature was between 100 and 300 °C. EELS revealed that the NaCl film thicker than 3 nm completely covers the substrate and that the grown film is stoichiometric. This contrasts with the case of KBr growth on a GaAs(001) substrate, where epitaxial growth was not observed. The latter result seems to be due to the large misfit (16.8%). However, KBr was found to grow epitaxially on a NaCl-on-GaAs(001) substrate. The NaCl epilayer enables heteroepitaxial growth of another foreign alkali halide.

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