X-ray observation of porous-silicon wetting
- 15 December 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (23) , 17162-17165
- https://doi.org/10.1103/physrevb.50.17162
Abstract
High-resolution x-ray-diffraction experiments show that the lattice parameter of porous-silicon layers expands when wetted by an alcohol or an alkane. This phenomenon is nearly reversible when the alkane is removed while there is a time-dependent drift during alcohol wetting. The experimental results obtained for several alkanes and for two types of samples (p and type) reveal that the magnitude of the lattice-parameter change is correlated with the size of the nanocrystallites rather than with the nature of the alkane. We propose that the lattice expansion is due to a change of the porous-silicon surface stress induced by wetting.
Keywords
This publication has 27 references indexed in Scilit:
- Effect of thermal annealing and surface coverage on porous silicon photoluminescenceApplied Physics Letters, 1992
- Mechanisms of visible-light emission from electro-oxidized porous siliconPhysical Review B, 1992
- Luminescence and structural study of porous silicon filmsJournal of Applied Physics, 1992
- Visible electroluminescence from porous siliconApplied Physics Letters, 1992
- Photoluminescence of high porosity and of electrochemically oxidized porous silicon layersSurface Science, 1991
- Electroluminescence in the visible range during anodic oxidation of porous silicon filmsApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Porosity and Pore Size Distributions of Porous Silicon LayersJournal of the Electrochemical Society, 1987
- A study of silicon MBE on porous silicon substratesJournal of Vacuum Science & Technology B, 1985
- Microstructure and formation mechanism of porous siliconApplied Physics Letters, 1985