Electron Emission from Breakdown Regions in SiCJunctions
- 15 January 1959
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 2 (2) , 48-50
- https://doi.org/10.1103/physrevlett.2.48
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.2.48Keywords
This publication has 6 references indexed in Scilit:
- Oxidation Behavior of Silicon CarbideJournal of the American Ceramic Society, 1958
- Intrinsic Optical Absorption in Single-Crystal Silicon CarbidePhysical Review B, 1958
- Electron Emission from Avalanche Breakdown in SiliconPhysical Review B, 1957
- Structure and Characteristics of Silicon Carbide Light-Emitting JunctionsJournal of Applied Physics, 1957
- Absorption of Light in Alpha SiC near the Band EdgePhysical Review B, 1957
- Theory of Electron Multiplication in Silicon and GermaniumPhysical Review B, 1954