Single phase polycrystalline metastable (GaSb)1−xGex alloys from annealing of amorphous mixtures: Ion mixing effects during deposition
- 15 February 1982
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (4) , 329-331
- https://doi.org/10.1063/1.93086
Abstract
Low energy (+ ion bombardment of the growing film during the deposition of amorphous GaSb+Ge mixtures was found to affect both the transformation rate kinetics as well as the reaction path during subsequent annealing. Ion bombardment induced collisional cascades resulted in more random mixing in the growing films thus retarding the rate of the amorphous to equilibrium state phase transformation during annealing and allowing the formation of homogeneous metastable randomly oriented single phase (GaSb)1−xGex alloys. The films were ∼1.5 μm thick and the average grain size in the metastable state was ∼300 Å.Keywords
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