Long-wavelength (1.0–1.6 μm)In0.52Al0.48As/ In0.53(GaxAl1−x)0.47As/In0.53Ga0.47As metal-semiconductor-metal photodetector
- 12 March 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (11) , 1067-1068
- https://doi.org/10.1063/1.102567
Abstract
We have fabricated a metal‐semiconductor‐metal Schottky photodetector on a semi‐insulating InP substrate using a nominally lattice‐matched In0.52Al0.48As/In0.53(GaxAl1−x)0.47As (graded)/In0.53Ga0.47As structure grown by molecular beam epitaxy. On average the graded quaternary layer enhanced the responsivity by about 35% compared to an identical device without the graded region, reaching a maximum of 0.45 A/W at 10 V applied bias. The associated dark current was 95 nA; the dark capacitance was 90 fF. High‐speed measurements with a gain‐switched 1.3 μm laser diode demonstrated an instrumentation‐limited impulse response of 50 ps.Keywords
This publication has 2 references indexed in Scilit:
- Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlatticeApplied Physics Letters, 1989
- Optical response time of In0.53Ga0.47As/InP avalanche photodiodesApplied Physics Letters, 1982