Mobility degradation due to the gate field in the inversion layer of MOSFET's

1 October 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 3 (10) , 292-293
https://doi.org/10.1109/edl.1982.25573

Abstract

A simple classical theory that explains how the carrier mobility degrades as a function of the gate field in the inversion layer of MOSFET's is presented here. A formula of effective gate field-dependent mobility is derived and is reducible to the well-known empirical formula at the limit of large gate oxide thickness. However, their difference becomes drastic at thin gate oxide and high gate fields. For example, att_{ox} = 200Å, andV_{GS} = 5V, the difference is about 20% for mobility prediction if same physical parameters are used in both formulae. The present theory has been incorporated into a new model forI-Vcharacteristics of MOSFET's and good agreements with experimental data fort_{ox} = 200Å transistors have been observed.

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