Vapor Phase Deposition and Etching of Silicon

1 January 1965

journal article
Published by The Electrochemical Society in Journal of the Electrochemical Society

Vol. 112 (10) , 988-994
https://doi.org/10.1149/1.2423357

Abstract

A theory is developed and compared with experiment for the growth and etching of silicon in , and/or mixtures. The horizontal reactor used is operated, as is usual for commercial reactors, under conditions such that the processes are mass‐transport controlled. Good agreement between theory and experiment is found if it is assumed that mass transport occurs predominantly by diffusion.

Keywords

ETCHING
SILICON
REACTOR USED
TRANSPORT CONTROLLED
HORIZONTAL REACTOR
COMMERCIAL REACTORS
GOOD AGREEMENT
OCCURS PREDOMINANTLY
AND/OR MIXTURES

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