High temperature (90°C) CW operation of 646 nm InGaAlP laser containing multiquantum barrier
- 16 January 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (2) , 150-151
- https://doi.org/10.1049/el:19920093
Abstract
CW laser operation of a 646 nm InGaAlP laser, incorporating a multiquantum barrier (MQB), is shown for the first time. The maximum temperature of operation was raised by 20°C, in comparison to an identical laser without an MQB layer, to 90°C. This increase is taken as direct evidence of the authenticity of the MQB effect.Keywords
This publication has 1 reference indexed in Scilit:
- 633 nm CW operation of GaInP/AlGaInP laser-diodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990