Stability and hole-transport in a-Si:H prepared by “Chemical Annealing”
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 137-138, 693-696
- https://doi.org/10.1016/s0022-3093(05)80215-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- Effects of inert gas dilution of silane on plasma-deposited a-Si:H filmsApplied Physics Letters, 1981
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977