Tunneling magnetoresistance and current distribution effect in spin-dependent tunnel junctions
- 1 June 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (11) , 6694-6696
- https://doi.org/10.1063/1.367719
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Quenching of Magnetoresistance by Hot Electrons in Magnetic Tunnel JunctionsPhysical Review Letters, 1997
- Microstructured magnetic tunnel junctions (invited)Journal of Applied Physics, 1997
- Spin polarized tunneling in reactively sputtered tunnel junctionsJournal of Applied Physics, 1997
- Spin-valve-like properties and annealing effect in ferromagnetic tunnel junctionsIEEE Transactions on Magnetics, 1997
- Influence of the Sputtering Parameters on the Properties of A12O3 and Ain Insulators in Spin Tunneling JunctionsMRS Proceedings, 1997
- Geometrically enhanced magnetoresistance in ferromagnet–insulator–ferromagnet tunnel junctionsApplied Physics Letters, 1996
- Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel JunctionsPhysical Review Letters, 1995
- Giant magnetic tunneling effect in Fe/Al2O3/Fe junctionJournal of Magnetism and Magnetic Materials, 1995
- Magnetoresistance and magnetic properties of NiFe/oxide/Co junctions prepared by magnetron sputteringJournal of Applied Physics, 1994
- Conductance and exchange coupling of two ferromagnets separated by a tunneling barrierPhysical Review B, 1989