The Composition Dependence of Some Electrical Properties of FeSix Thin Films
- 1 June 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (6R)
- https://doi.org/10.1143/jjap.29.1118
Abstract
The composition dependence of the Seebeck coefficients and the microstructures of FeSi x thin films were studied. In the region of x2.08, the Seebeck coefficient is negative. From the results of the d-spacing measurements, it is inferred that the excess Si in the sample with x>2.08 induces structural defects in the FeSi2, which provides the donor.Keywords
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