High temperature twisted silicon single crystal (1270K, 240°/cm, 90 min) exhibit a structureless weak electron paramagnetic resonance with a typical g-value of 2.0043. It is attributed to isolated dangling bonds in the cores of reconstructed dislocations. Incorporation of hydrogen atoms after deformation partly leads to the extinction of photoluminescence signals. One of the main emission (0.81eV) and a weaker one at 0.84eV remain unchanged in intensity, while the 0.87eV-line is enhanced. The correlation of the 0.81eV-signal to dislocation states is discussed