Atomic structure of epitaxial Er silicides grown on Si(111) studied by surface extended X-ray absorption fine structure
- 20 April 1994
- journal article
- Published by Elsevier in Surface Science
- Vol. 307-309, 710-715
- https://doi.org/10.1016/0039-6028(94)91481-8
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- The influence of growth techniques on the structure of epitaxial ErSi1.7 on Si(111)Applied Surface Science, 1993
- Thermal evolution of the Er/Si(111) interface: bulk and surface electronic statesSurface Science, 1992
- Experimental band structure and Fermi surface of a two-dimensional Er silicide on Si(111)Solid State Communications, 1992
- Infrared response of Pt/Si/ErSi1.7 heterostructure: Tunable internal photoemission sensorApplied Physics Letters, 1992
- Magnetic properties versus crystal structure in heavy rare-earth silicides RSi2-xPhysica B: Condensed Matter, 1991
- Electronic properties of epitaxial erbium silicideSurface Science, 1991
- Crystallographic and magnetic structures of Er3Si5Physica B: Condensed Matter, 1990
- Fabrication and structure of epitaxial Er silicide films on (111) SiApplied Physics Letters, 1989
- Epitaxial growth of rare-earth silicides on (111) SiApplied Physics Letters, 1986
- Valence fluctuations of ytterbium in silicon-rich compoundsJournal of the Less Common Metals, 1979