Acoustic determination of depletion depth in metal-semiconductor contacts
- 1 August 1979
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (8) , 5539-5540
- https://doi.org/10.1063/1.326617
Abstract
The discovery of highly efficient acoustic-surface-wave and acoustic-volume-wave generation in nonpiezoelectric crystals has previously been explained by the properties of metal-semiconductor contacts (surface-barrier model). In the present paper we demonstrate that measurements of the frequency-dependent efficiency of the volume-wave transducer provides an accurate method for the determination of the depletion depth of a metal-semiconductor contact. It is concluded that the surface-barrier transducer model accounts for observations on acoustic-volume-wave generation and detection in nonpiezoelectric dielectrics.This publication has 2 references indexed in Scilit:
- Light-sensitive surface-barrier generation of acoustic volume wavesApplied Physics Letters, 1978
- Light-sensitive Rayleigh-wave generation by surface piezoelectricityApplied Physics Letters, 1978