a-Si:H gap states investigated by CPM and SCLC
- 1 December 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 97-98, 715-722
- https://doi.org/10.1016/0022-3093(87)90169-4
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- The density of states in undoped and doped amorphous hydrogenated siliconJournal of Non-Crystalline Solids, 1987
- Defects in Amorphous Silicon: A New PerspectivePhysical Review Letters, 1986
- Subbandgap absorption in a-Si:H from photoconductivity spectraJournal of Non-Crystalline Solids, 1985
- Study of light-induced metastable defects by means of temperature-modulated space-charge-limited currentsPhilosophical Magazine Part B, 1985
- Recombination in-Si: H: Transitions through defect statesPhysical Review B, 1984
- Gap states density in a-Si:H deduced from subgap optical absorption measurement on Schottky solar cellsPhysica Status Solidi (a), 1984
- Photoelectrical and optical study of p-type a-Si:H used as a photoreceptorJournal of Non-Crystalline Solids, 1983
- Effects of doping on transport and deep trapping in hydrogenated amorphous siliconApplied Physics Letters, 1983
- Density of the gap states in undoped and doped glow discharge a-Si:HSolar Energy Materials, 1983
- SUB-GAP AND BAND EDGE OPTICAL ABSORPTION IN a-Si:H BY PHOTOTHERMAL DEFLECTION SPECTROSCOPYLe Journal de Physique Colloques, 1981