Ion-implanted planar pin diodes in InP/GaInAs layers grown on implanted InP:Fe
- 17 August 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (17) , 1158-1159
- https://doi.org/10.1049/el:19890777
Abstract
The fabrication of planar pin diodes using InP/GaInAs layer growth on Si-implanted InP: Fe substrates and Be implantation is reported. Diodes with low leakage currents are obtained. At 10 V reverse bias and a diameter of 50µm, we measure 0.4 and l.6nA without and with substrate implant, respectively. The reverse characteristics show a strong dependence on the annealing conditions for the substrate implant.Keywords
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