Nucleation of an intermetallic at thin-film interfaces: VSi2 contrasted with Al3Ni
- 1 June 1992
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 7 (6) , 1350-1355
- https://doi.org/10.1557/jmr.1992.1350
Abstract
We analyze the formation of VSi2 at the amorphous-vanadium-silicide/amorphous-Si interface by linear-heating and isothermal calorimetry, and cross-sectional transmission electron microscopy. We show evidence that indicates sporadic VSi2 nucleation with a steady-state nucleation rate after a transient period. The results are contrasted with those obtained for Al2Ni nucleating at the polycrystalline-Al/polycrystalline-Ni interface, where the kinetics appears to be controlled by growth of a fixed number of nuclei at quickly consumed preferred nucleation sites.Keywords
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