Growth of ultrapure and Si-doped InP by low pressure metalorganic chemical vapor deposition
- 1 March 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (5) , 476-478
- https://doi.org/10.1063/1.95562
Abstract
Low pressure metalorganic chemical vapor epitaxial growth and characterization of high purity and Si‐doped indium phosphide on semi‐insulating (100) InP:Fe substrate are presented in this letter. Electrical characteristics of the layers were determined from Hall measurements. Hall mobilities as high as 145 000 cm2 V−1 s−1 at 77 K have been achieved on high purity layers with net donnor density ND−NA≂2×1014 cm−3. High resolution photoluminescence measurements were performed with the as‐grown layers at temperatures down to 1.7 K. Carrier concentration and the resulting mobility of intentionally Si‐doped low pressure metalorganic chemical vapor deposition grown InP layers were also studied.Keywords
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