Origin of RHEED intensity oscillations during the growth of (Y,Dy) thin films
- 15 September 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (11) , 8122-8125
- https://doi.org/10.1103/physrevb.50.8122
Abstract
We propose a mechanism for the origin of RHEED intensity oscillations during the growth of (Y,Dy) thin films. Surface relaxation and RHEED intensity recovery observed during the growth of these materials are ascribed predominantly to the diffusion of already formed (Y,Dy) units rather than to the chemical reaction of the constituents to form a unit cell. The validity of the model is demonstrated by comparing the surface step densities determined from results of Monte Carlo simulations with RHEED intensity oscillations observed during pulsed laser deposition.
This publication has 16 references indexed in Scilit:
- Effect of atomic oxygen on the initial growth mode in thin epitaxial cuprate filmsPhysical Review B, 1994
- Reflection high-energy electron diffraction oscillations modulated by laser-pulse depositedPhysical Review Letters, 1992
- Reflection high-energy electron-diffraction studies of the growth of and superconducting thin filmsPhysical Review B, 1992
- Step-density variations and reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on vicinal GaAs(001)Physical Review B, 1992
- Layer-by-layer deposition of La1.85Sr0.15CuOx films by pulsed laser ablationApplied Physics Letters, 1992
- Atomistic numerical study of molecular-beam-epitaxial growth kineticsPhysical Review B, 1992
- Growth Mechanism of Sputtered Films of YBa 2 Cu 3 O 7 Studied by Scanning Tunneling MicroscopyScience, 1991
- Screw dislocations in high-Tc filmsNature, 1991
- Reflection high-energy electron diffraction oscillations during epitaxial growth of high-temperature superconducting oxidesPhysical Review Letters, 1990
- Atomistic study of defects inPhysical Review B, 1990