A multi-regional small-signal model derived from the charge-based large-signal bipolar transistor model
- 6 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 111-113
- https://doi.org/10.1109/bipol.1988.51058
Abstract
A multiregional small-signal model is derived from a charge-based large-signal bipolar transistor model, which has been upgraded to include emitter crowding, sidewall injection, and other multidimensional effects. This multiregional model is verified and the effect of this three-region analysis of the parameter extraction for the small-signal transistor model over a range of (low to high) injection conditions is demonstrated.Keywords
This publication has 4 references indexed in Scilit:
- Physical modeling of high-current transients for bipolar transistor circuit simulationIEEE Transactions on Electron Devices, 1987
- Advanced bipolar transistor modeling: Process and device simulation tools for today's technologyIBM Journal of Research and Development, 1985
- A simple method for separation of the internal and external (peripheral) currents of bipolar transistorsSolid-State Electronics, 1984
- The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometriesIEEE Transactions on Electron Devices, 1964