Silver Film Atomic Oxygen Sensors

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Abstract
Measurements indicate that the initial oxidation rate of a thin film of silver is linearly proportional to the atomic oxygen flux; however, the oxidation coefficient is dependent upon the technique for depositing and chemically reducing the thin film. A model is developed relating the conductance of a thin-film sample to its oxidation. The measurements and the model indicate that the silver film is very promising as a sensor of upper atmospheric atomic oxygen. The model also indicates that the surface recombination coefficient of atomic oxygen depends on the oxide thickness as well as the flux.

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