A new three dimensional IC fabrication technology, stacking thin film DUAL-CMOS layers

9 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 657-660
https://doi.org/10.1109/iedm.1991.235336

Abstract

A novel 3-D IC has been developed in which electrical function blocks of thin-film dual-active-device-layer (DUAL) CMOS ICs are bonded cumulatively. In the DUAL-CMOS ICs, pMOSFETs are stacked on nMOSFETs by using a laser beam annealing technique. By mechano-chemical polishing, the IC substrates are thinned, and then joined together. Operation of function blocks such as an inverter and ring oscillator stacked in the 3-D IC is confirmed.<>

Keywords

STACKING
THREE-DIMENSIONAL INTEGRATED CIRCUITS
MOSFETS
OPTICAL DEVICE FABRICATION
CMOS TECHNOLOGY
TRANSISTORS
BONDING
RING LASERS
LASER BEAMS
ANNEALING

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