The Effect of Parasitic Elements on Reflection Type Tunnel Diode Amplifier Performance
- 1 November 1965
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 13 (6) , 827-836
- https://doi.org/10.1109/tmtt.1965.1126113
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- A Low-Noise and Wide-Band Esaki Diode Amplifier with a Comparatively High Negative Conductance Diode at 1.3 Gc/sIEEE Transactions on Microwave Theory and Techniques, 1965
- A Design Theory for Optimum Broadband Reflection AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1964
- Prototypes for Use in Broadbanding Reflection AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1963
- Design Theory of Optimum Negative-Resistance AmplifiersProceedings of the IRE, 1961
- Theoretical limitations on the broadband matching of arbitrary impedancesJournal of the Franklin Institute, 1950