Nanometer structure fabricated by FIB and its observation by STM
- 31 December 1987
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 6 (1-4) , 343-348
- https://doi.org/10.1016/0167-9317(87)90058-x
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- A GaAs metal-semiconductor field-effect transistor with a mushroom gate fabricated by mixed exposure of focused ion beamsJournal of Vacuum Science & Technology B, 1987
- The focused ion beam as an integrated circuit restructuring toolJournal of Vacuum Science & Technology B, 1986
- Maskless ion beam writing of precise doping patterns with Be and Si for molecular beam epitaxially grown multilayer GaAsJournal of Vacuum Science & Technology B, 1986
- Chemical Etching Characteristics of ( 001 ) GaAsJournal of the Electrochemical Society, 1983
- Maskless etching of a nanometer structure by focused ion beamsJournal of Vacuum Science & Technology B, 1983
- Surface Studies by Scanning Tunneling MicroscopyPhysical Review Letters, 1982