A period-doubled structure for the 90-degree partial dislocation in silicon

Preprint

9 April 1997

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9704079

Abstract

We suggest that the commonly-accepted core structure of the 90-degree partial dislocation in Si may not be correct, and propose instead a period-doubled structure. We present LDA, tight-binding, and classical Keating-model calculations, all of which indicate that the period-doubled structure is lower in energy. The new structure displays a broken mirror symmetry in addition to the period doubling, leading to a wide variety of possible soliton-like defects and kinks.

Keywords

DEGREE PARTIAL DISLOCATION
PERIOD DOUBLED STRUCTURE
PARTIAL DISLOCATION
DOUBLED STRUCTURE
SILICON
SOLITON
LDA

All Related Versions

Version 1, 1997-04-09, ArXiv
Published version: Physical Review Letters, 79 (2), 245.

This publication has 0 references indexed in Scilit: