Circuit Fabrication at 17 nm Half-Pitch by Nanoimprint Lithography
- 4 February 2006
- journal article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 6 (3) , 351-354
- https://doi.org/10.1021/nl052110f
Abstract
High density metal cross bars at 17 nm half-pitch were fabricated by nanoimprint lithography. Utilizing the superlattice nanowire pattern transfer technique, a 300-layer GaAs/AlGaAs superlattice was employed to produce an array of 150 Si nanowires (15 nm wide at 34 nm pitch) as an imprinting mold. A successful reproduction of the Si nanowire pattern was demonstrated. Furthermore, a cross-bar platinum nanowire array with a cell density of approximately 100 Gbit/cm(2) was fabricated by two consecutive imprinting processes.Keywords
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