Theory of band offsets at semiconductor heterojunctions: An ab-initio linear response approach
- 31 December 1989
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 6 (1) , 31-37
- https://doi.org/10.1016/0749-6036(89)90090-6
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Dipole effects and band offsets at semiconductor interfacesPhysical Review B, 1988
- Ab initio(GaAs(AlAs(001) superlattice calculations: Band offsets and formation enthalpyPhysical Review B, 1987
- Interface phenomena at semiconductor heterojunctions: Local-density valence-band offset in GaAs/AlAsPhysical Review B, 1987
- Quasiparticle energies in GaAs and AlAsPhysical Review B, 1987
- Self-consistent theory of electronic states and dielectric response in semiconductorsPhysical Review B, 1986
- Self-consistent energy bands and formation energy of the (GaAs(AlAs(001) superlatticePhysical Review B, 1986
- Commutativity and transitivity of GaAs-AlAs-Ge(100) band offsetsPhysical Review B, 1986
- Valence band offset in AlAs/GaAs heterojunctions and the empirical relation for band alignmentJournal of Vacuum Science & Technology B, 1985
- External Fields in the Self-Consistent Theory of Electronic States: A New Method for Direct Evaluation of Macroscopic and Microscopic Dielectric ResponsePhysical Review Letters, 1983
- Comment on the average potential of a Wigner solidPhysical Review B, 1981