Blister formation in Pd gate MIS hydrogen sensors
- 1 December 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 3 (12) , 384-386
- https://doi.org/10.1109/EDL.1982.25608
Abstract
Blister formation in palladium gate metal-insulator-semiconductor hydrogen sensors occurs even at low hydrogen pressures and leads to erroneous measurements. The metal defects are due to hydrogen induced stresses in the palladium film. Being aware of this problem, the degradation can be avoided.Keywords
This publication has 0 references indexed in Scilit: