Impurity-bound magnetic polarons in diluted magnetic semiconductors

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Abstract
Theoretical calculations of magnetic polaron energies resulting from charge carriers bound to donor or acceptor ion sites in diluted magnetic semiconductors have been performed. The dependence of the polaron energy on the magnetic field, the temperature, and the concentration of the magnetic ion has been evaluated. Similarly the effects of central cell corrections on polaron energies have been determined. The calculated values of the polaron energies are compared with experimental results and the implications of the comparison are discussed.