Brillouin scattering study of gallium nitride: elastic stiffness constants
- 1 January 1997
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 9 (1) , 241-248
- https://doi.org/10.1088/0953-8984/9/1/025
Abstract
High-resolution Brillouin scattering measurements on a high-quality wurtzite gallium nitride (GaN) single crystal were carried out and elastic stiffness constants were determined. A comparison is given with the results of a recently reported model for calculation of the elastic constants of III - V semiconductors based on the modified version of Keyes's relations. A good agreement is found between the experimental and theoretical elastic constants for GaN.Keywords
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