Studies of MOS and Heterojunction Devices Using Doped μc-Si and a-Si
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Properties of intrinsic and doped a-Si:H deposited by remote plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1988
- Properties of the SiH bond-stretching absorption band in a-Si:H grown by remote plasma enhanced CVD (RPECVD)Journal of Non-Crystalline Solids, 1987
- Physics of Semiconductor DevicesPhysics Today, 1970