Reflection spectra of highly doped n-InPxAs1-x solid solutions

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Abstract
Reflection spectra of highly doped n-type InPxAs1-x solid solutions with free-carrier concentrations 3.5 x 10^17 to 2.25 × 10^19 cm-3 have been measured. The effective mass of the free carriers at the Fermi level has been determined for all studied specimens. On the basis of the obtained experimental data the values of the electron effective masses at the bottom of the conduction band have been calculated. It is shown that the experimentally obtained values of the free-carrier effective masses coincide with the calculated ones according to Kane's theory up to an electron concentration of the order of 10^19 cm-3. It is shown as well that the plot of free-carrier effective mass versus n-InPxAs1-x composition is not linear. For the composition x = 0 the law of conduction-band dispersion is defined on the basis of experimentally obtained concentration dependence of the electron effective mass. It is confirmed that the results obtained from the experimental data coincide with those calculated according to Kane's theory up to concentrations of the order of 10^19 cm-3

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