Silicon Wafer Direct Bonding through the Amorphous Layer
- 1 October 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (10B) , L1322
- https://doi.org/10.1143/jjap.34.l1322
Abstract
We found that excess water molecules and hydrocarbons, existing in the bonding interface and thought to cause voids, were absorbed in the damaged area of the amorphous layer formed on the surface of the wafer upon direct bonding of silicon wafers, thus making it possible to suppress void formation with relatively low heat-treatment temperature of 600° C for 3 h.Keywords
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