This work is concerned with deep level transient spectroscopy (DLTS) of extended many-electron defects and a qualitative interpretation of measured spectra as compared to that of point defects. As examples the spectra of dislocation core states in n-type silicon and of point defect clouds surrounding the dislocation in n-type germanium are discussed. From a comparison of these results with recent theoretical calculaticn it is concluded, that in silicon possibly the core states of incompletely reconstructed 60° - partial dislocation have been observed