InGaAsP laser with semi-insulating current confining layers
- 9 June 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (23) , 1572-1573
- https://doi.org/10.1063/1.96871
Abstract
The fabrication and performance characteristics of a InGaAsP laser structure with semi-insulating current confining layers are reported. The semi-insulating layers are Fe-doped InP and are grown using the metalorganic chemical vapor deposition growth technique. The lasers have threshold currents in the range 20–30 mA and external differential quantum efficiency ∼0.2 mW/mA/facet at 30 °C. The bandwidth for small-signal response is ∼2 GHz which suggests that the laser structure is suitable for high bit rate lightwave transmission systems. Initial aging results yield an estimated operating lifetime of 10 years at 20 °C.Keywords
This publication has 3 references indexed in Scilit:
- Growth of Fe-doped semi-insulating InP by MOCVDJournal of Crystal Growth, 1984
- Analysis of leakage currents in 1.3-µm InGaAsP real-index-guided lasersJournal of Lightwave Technology, 1984
- InGaAsP double-channel- planar-buried-heterostructure laser diode (DC-PBH LD) with effective current confinementJournal of Lightwave Technology, 1983