Effects of interfacial chemistry on the formation of interfacial layers and faulted defects in ZnSe/GaAs
- 22 April 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (17) , 2413-2415
- https://doi.org/10.1063/1.116151
Abstract
Existence of Zn-As and Ga-Se interfacial layers were suggested by transmission electron microscopy in Zn treated and Se treated or reacted ZnSe/GaAs interfaces, respectively. High densities of As precipitates and Shockley partials were introduced in films with Zn treatment on a c(4×4) As-rich GaAs surface. In addition, high densities of vacancies and Shockley partials were obtained in samples with a Se-reacted ZnSe/GaAs interface. Formation of the Shockley partials may originate from the stacking errors induced by disordering of Zn- or Ga-interstitials on the GaAs surface.Keywords
This publication has 0 references indexed in Scilit: