A Formation of Crystal Defects in Carbon‐Doped Czochralski‐Grown Silicon after a Three‐Step Internal Gettering Anneal
- 1 July 1991
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 138 (7) , 2153-2159
- https://doi.org/10.1149/1.2085942
Abstract
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