Kinetics of the formation of normal and inverted molecular beam epitaxial interfaces: A reflection high-energy electron diffraction dynamics study of GaAs/AlxGa1−xAs(100) multiple quantum wells
- 1 March 1986
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 4 (2) , 590-593
- https://doi.org/10.1116/1.583382