1.3μm InGaAsP/InP light emitting diodes with internally defined emission area prepared by single-step LPE technique

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Abstract
An LPE single-step process is described for the fabrication of InGaAsP/InP double heterostructure surface emitting LEDs with internally defined emission area. The technique provides a simple production method which lends itself to simple upside-up mounting of LED chips and application of back surface mirrors for enhancement of light extraction efficiency.