Raman Scattering Studies on Hydrogenated Amorphous Silicon Prepared under High Deposition Rate Conditions
- 1 June 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (6A) , L428
- https://doi.org/10.1143/jjap.24.l428
Abstract
We have made Raman scattering studies on hydrogenated amorphous silicon (a-Si:H) prepared at high deposition rates ranging from 10–105 A/s. The full width of half maximum of the TO-like band, ΔωTO, increases with the increase in the deposition rate, r g, which implies an increase in the structural disorder of a-Si:H with the increase in r g. However, the degree of such increase is small when compared with those observed in a-Si:H alloy materials such as amorphous silicon carbide and amorphous silicon nitride. We have found that the value of ΔωTO is correlated with the B value (the square of the slope of √αh ν versus h ν plot).Keywords
This publication has 10 references indexed in Scilit:
- Photoconductivity and recombination in amorphous silicon alloysPhysical Review B, 1984
- Optical and electrical properties of hydrogenated amorphous silicon prepared by glow discharge decomposition of disilaneSolar Energy Materials, 1984
- Hydrogen content dependence of the optical energy gap in a-Si:HJournal of Non-Crystalline Solids, 1983
- Raman studies on local structural disorder in silicon-based amorphous semiconductor filmsSolid State Communications, 1983
- Order parameters in a-Si systemsSolid State Communications, 1983
- Raman scattering in hydrogenated amorphous silicon under high pressureSolid State Communications, 1982
- Interband Absorption Spectra of Disordered Semiconductors in the Coherent Potential ApproximationJournal of the Physics Society Japan, 1981
- A new characterization parameter for hydrogenated amorphous silicon: B (the square of the gradient of the (αh/ω)1/2 versus h/ω plot)Journal of Applied Physics, 1981
- Vibrational spectra and topological structure of tetrahedrally bonded amorphous semiconductorsPhilosophical Magazine, 1976
- Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductorsPhilosophical Magazine, 1970